Khetha izwe lakho noma isifunda.

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Ukuhlaziywa okuphelele komphumela we-IGBT

Ezweni eliyinkimbinkimbi lezinto ze-elekthronikhi, ukuqina kwe-IGBTS (i-Gate Eletation Modipolar Transistors) imi njengetshe legumbi lokuthembeka kohlelo.Le ndatshana idlulela enhliziyweni yento ebaluleke kakhulu ngaphakathi kwe-IGBTS: Umphumela we-latch-up.Lo mphumela uvuse ikhanda lapho imingcele iwela - ngokuqondile, lapho indawo ephephile yokusebenza idluliwe, i-efferating acpeating idluliwe, i-rurent of ruraway yamanje.Izimpande zalolu vela phakathi kokuhlangana hhayi kuphela ngomklamo we-chip kodwa futhi nokwakhiwa kwayo kwangaphakathi okuyinkimbinkimbi.Naphezu kokungahleleki okuphansi kokwehluleka kwe-latch-up ezimweni zangempela zomhlaba, ukubheka imishini yayo kuhlala kubalulekile emklamweni we-nuanced and application of Igbt.
Ake siqale uhambo ngesakhiwo esiyisisekelo nemigomo yokusebenza ye-IGBT.Ukuhlanganiswa kwe-mosfet kanye nezimpawu ze-BJT, i-IGBT iphuma njenge-semiconductor powerhouse.Izibuko zalo ze-Blueprint zalo ze-O-MOS-Mos exhunywe nge-Darlington.Umdanso wevota wangaphambili phakathi kwesango futhi u-Emitter uvusa uMos Transistor, eveza indlela yokumelana ephansi ngesisekelo sakwaTenp Transtoror.Lo mthetho uwulalela i-PNP Transistor.Lesi siqwembe sikhula njenge-voltage yesango sinciphise noma sibuyele emuva, sicisha umsunguli we-mos transistor futhi sihlukanise isisekelo se-PNP Transtoror samanje - ngakho-ke, i-IGBT DIMS.Ama-Igbts, adunyiswe amandla awo okulawula ama-voltage alawulwa, awobiitous kumandla we-elektroniki.

Umphumela we-latch-up, inganekwane yobunzima bangaphakathi, ubuyisele isifunda esilinganayo sika-Igbt.Kufihlwe ngaphakathi kwezinto ezihlangene, ezinjengezembozo ze-thyristors.Umqoqi ngokweqile uphefumula impilo kulezi zinto, kubangele i-NPN transistor.Lo mcimbi ubeka ukusabela kwe-chain, ukugcwala kokubili ama-NPN kanye ne-PNP transistors futhi uvuse i-thyristor ye-thyrititic ibe yi-Lock-Self-up.Lesi simo sibonisa umqoqi wamanje, okuholela ku-maelstrom yokusetshenziswa kwamandla futhi, ekugcineni, ukudilizwa kwamadivayisi.
Ngaphesheya kwe-Static Realm, umphumela oshukumisayo we-latch-up uyala ukunakwa.Ngesikhathi sokujika okusheshayo, ukwehla kwamanje kwe-Perapitous ne-DV / DT ephezulu kuvela indawo yokuhlala yamanje.Lokhu kuhlangana, ukuvakasha ngokusebenzisa ukumelana nokukhulelwa komzimbaNgakho-ke kwenzeka i-saga eguqukayo eguqukayo, ukukhulisa isibukeli sokwehluleka kwensiza.
Ukulwa nomphumela we-latch, indlela ehlukahlukene ibalulekile.Okuphambili, kufanele sikwazi ukumelana nezakhiwo ze-Igbt ze-Igbt kuze kube manje, mhlawumbe ngokunciphisa ukumelana nokungenisa umzimba komzimba Rs.Kamuva, ngokulawula i-PNP Transistor's Hfe ngokulinganisa okucacile kobukhulu besendlalelo se-N-Buffer ne-Doping kubalulekile.Okokugcina, singakwazi ukumela i-PNP Transistor's Hfe ngezinhlelo zokunciphisa impilo.
Sengiphetha, indawo ephephile yokusebenza yi-Achilles 'Heel' ka-Igbt;eduka ngaphandle kokumema ubungozi.Ukusuka ekuqaleni komkhiqizo wokugcina, isinyathelo ngasinye e-IGBT Device Odyssey siyindlela yokuvuna izingxenye eziphezulu ze-notch, ezihambisana nezidingo ezahlukahlukene.Ngokuvimbela izingxenyana eziyinkimbinkimbi ngaphakathi kwe-IGTS, sivula amandla ukucwilisa ukwakhiwa kwawo nokusetshenziswa, ukuqinisa ukwethembeka kohlelo nokusebenza kahle.