A cikin duniyar hadin lantarki na abubuwan lantarki, kwanciyar hankali na Igbts (waɗanda ke rufe ƙofar Bipolts) yana tsaye a matsayin abin dogaro na tsarin aiki.Wannan labarin ya cancanci cikin zuciyar pivotenon a cikin Igbts: tasirin latch-up.Wannan yana haifar da kai lokacin da aka tsallake kan iyakoki - musamman, lokacin da yankin amintaccen yanki ya wuce, ba da izinin toran na Rentaway.Tushen wannan abin da ya faru na hanzari ba wai kawai tare da zane na guntu ba amma kuma tare da inginin gine-gine na ciki.Duk da ƙarancin rashin daidaituwa na gazawar latch a cikin yanayin yanayin-duniya, yana kama kayan aikin sa ya kasance mai mahimmanci ga ƙirar nunawa da aikace-aikacen Igbts.
Bari mu shiga tafiya ta hanyar ingantaccen tsari da kuma ka'idodi na IGBT.Fusion na Mosfet da halayen Bjt, IGBT ya fito a matsayin gidan wuta na Semiconductor.Fauns ɗinsa na nuna alama na ɗan wasan Darlington-hade BI-Mos transistor.Dance ta gaba ta rawa tsakanin ƙofar da Emiter ya farkar da transistor, yana ɗaukar hanya mai ƙarancin tsayayya ta hanyar busasshiyar hanyar PNP da mai tarawa.Wannan aikin da aka kunna PNP na PNP.Kwallan ya yi kauri kamar yadda ƙofofin kofa na ƙofofin ƙasa, wanda ke ɗauke da tushe na masallacin masallacin masallacin PNP - don haka, IGBT DEST.Igbts, ya yaba da kayan aikin da suke sarrafawa, suna da tabbas cikin abubuwan lantarki.
Tasirin latch-et, labari na rikitarwa na ciki, dangantaka da baya ga ainihin da'irar IGBT daidai.Abubuwan da ke cikin ɓoye sune parasitic, kamar wato countristrailtors.Yawan mai tattarawa a halin yanzu numfasawa cikin wadannan abubuwan, haifar da trans transistor.Wannan taron yana kafa hakkin sarkar, yana gama duka masu binciken NPN da PNP da farkawa da The Parasitic Mynoryor da makullin kai - na latch-up.Wannan yanayin catapults mai tattarawa, yana kaiwa ga matattarar karfi na wutar lantarki da, a qarshe, na'urar da ke zaune.
Bayan duniyar Static, sakamakon latch-up ya umarci hankali.A yayin hanzari-kashe-kashe-kashe, yanzu mambobi na yanzu DV / dT spawn gudun hijira a halin yanzu.Wannan gidan mai shiga, yana karkatar da juriya na jikin juriya Rs, na iya motsa NPN Transistor.Ta haka ne ake buɗe sahihancin songa-kulle saga, yana haskaka kwaro na gazawar.
Don magance tasirin latch-et, hanya mai yawa shine maɓallin maɓallin.Fiye da haka, dole ne mu iya samar da Injiniya IGBT tsarin mai tsayayya da wannan sakamako, watakila ta wajen rage girman yankin tsawan juriya Rs.Bayan haka, aiwatar da HFE na PNP na Transistor ta hanyar zabin m Layer na kauri da kuma matakin doping yana da mahimmanci.Aƙarshe, zamu iya yin amfani da HFE na PNP tare da dabarun rage rayuwa.
A ƙarshe, yankin aiki mai aiki lafiya shine diddige 'diddige na Igbt.bata ƙare da Peril.Daga cikin hanawa ga samfurin ƙarshe, kowane mataki a cikin masana'antar Igbt shine pivotal don girbi kayan haɗin kai-fili, wanda aka daidaita da buƙatun rarrabe.Ta hanyar hada kai aiban da ke cikin agaji a cikin Igbts, muna buɗe yuwuwar tabbatar da zanen da ƙirar su da amfani da tsarin, dangane da ingancin tsarin da inganci.